Title :
Microwave noise and power performance of metamorphic InP heterojunction bipolar transistors
Author :
Halder, Subrata ; Xiong, Yong Zhong ; Ng, Geok-Ing ; Wang, Hong ; Zheng, Haiqun ; Radhakrishnan, K. ; Hwang, James C M
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
12/1/2001 12:00:00 AM
Abstract :
For the first time, microwave noise and power performance of metamorphic InP heterojunction bipolar transistors (MM-HBTs) grown on GaAs substrates are reported. We find that microwave performance of MM-HBTs is comparable to that of lattice-matched InP heterojunction bipolar transistors of identical design. The preliminary results imply that the superior performance of InP heterojunction bipolar transistors can be confidently exploited with the more mature manufacturing technology of GaAs
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device noise; semiconductor device reliability; GaAs; III V semiconductors; InP-GaAs; MM-HBTs; manufacturing technology; metamorphic heterojunction bipolar transistors; microwave noise performance; microwave power performance; microwave transistors; reliability; Costs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Manufacturing; Microwave transistors; Semiconductor device noise; Substrates;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
