Microwave noise and power performance of metamorphic InP heterojunction bipolar transistors

Author

Halder, Subrata ; Xiong, Yong Zhong ; Ng, Geok-Ing ; Wang, Hong ; Zheng, Haiqun ; Radhakrishnan, K. ; Hwang, James C M

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

49

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2408

Lastpage

2412

Abstract

For the first time, microwave noise and power performance of metamorphic InP heterojunction bipolar transistors (MM-HBTs) grown on GaAs substrates are reported. We find that microwave performance of MM-HBTs is comparable to that of lattice-matched InP heterojunction bipolar transistors of identical design. The preliminary results imply that the superior performance of InP heterojunction bipolar transistors can be confidently exploited with the more mature manufacturing technology of GaAs

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device noise; semiconductor device reliability; GaAs; III V semiconductors; InP-GaAs; MM-HBTs; manufacturing technology; metamorphic heterojunction bipolar transistors; microwave noise performance; microwave power performance; microwave transistors; reliability; Costs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Manufacturing; Microwave transistors; Semiconductor device noise; Substrates;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.971628

Filename

971628