Variable-gain power amplifier for mobile WCDMA applications

Author

Vintola, Ville T S ; Matilainen, Mikko J. ; Kalajo, Sami J K ; Järvinen, Esko A.

Author_Institution

Nokia Mobile Phones, Helsinki, Finland

Volume

49

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2464

Lastpage

2471

Abstract

A single-chip linear power amplifier (PA) with >48-dB gain control range and >24-dBm output power with adjacent channel leakage power below -36 dBc is presented. The chip is realized using an AlGaAs-GaAs heterojunction-bipolar-transistor process and is aimed for 1.95-GHz mobile WCDMA applications. The amplifier consists of two blocks, the variable-gain amplifier, and the PA. The chip size is 1.3×1.1 mm² and it is mounted on an 8×8 mm² FR-4 type laminate with 26 pieces of 0402 surface-mountable discrete components composing a complete 50-Ω input-output amplifier module. This paper presents the design of the two blocks, discusses issues related to their combination, and presents complete amplifier realization and measurement results

Keywords

III-V semiconductors; UHF bipolar transistors; UHF power amplifiers; aluminium compounds; application specific integrated circuits; bipolar MMIC; code division multiple access; gallium arsenide; heterojunction bipolar transistors; integrated circuit design; integrated circuit measurement; integrated circuit packaging; linear network synthesis; mobile radio; surface mount technology; 1.1 mm; 1.3 mm; 1.95 GHz; 50 ohm; 8 mm; AlGaAs-GaAs; AlGaAs/GaAs heterojunction-bipolar-transistor process; FR-4 type laminate; GaAs HBT; PA; amplifier block design; amplifier blocks; amplifier measurement; application-specific integrated circuits; channel leakage power; chip size; gain control; gain control range; input-output amplifier module; integrated circuit design; linear circuits; microwave integrated circuits; mobile WCDMA applications; output power; power amplifier; single-chip linear power amplifier; surface-mountable discrete components; variable-gain amplifier; variable-gain power amplifier; GSM; Gain control; Gallium arsenide; Laminates; Microwave integrated circuits; Multiaccess communication; Power amplifiers; Radiofrequency amplifiers; Topology; Transmitters;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.971637

Filename

971637