Title :
New design method of uniform and nonuniform distributed power amplifiers
Author :
Duperrier, Cedric ; Campovecchio, Michel ; Roussel, Laurent ; Lajugie, Monique ; Quéré, Raymond
Author_Institution :
IRCOM, Limoges Univ., France
fDate :
12/1/2001 12:00:00 AM
Abstract :
A new design methodology of uniform and nonuniform distributed power amplifiers is reported in this paper. This method is based on analytical expressions of the optimum input and output artificial lines making up the uniform and nonuniform distributed architectures. These relationships are derived from the load-line requirement of each transistor size for optimum power operation. Furthermore, specific design criteria are presented to enable an efficient choice between uniform and nonuniform distributed architectures. To validate this new design methodology, a nonuniform distributed power amplifier has been manufactured at the TriQuint Semiconductor Foundry, Richardson, TX, using a 0.25-μm power pseudomorphic high electron-mobility process. This single-stage monolithic-microwave integrated-circuit amplifier is made of six nonuniform cells and demonstrates 1-W output power with 7-dB associated gain and 20% power-added efficiency over a multioctave bandwidth
Keywords :
HEMT integrated circuits; MMIC power amplifiers; distributed amplifiers; integrated circuit design; 0.25 micron; 1 W; 20 percent; 7 dB; artificial line; bandwidth; design method; distributed power amplifier; gain; load-line; monolithic microwave integrated circuit; nonuniform architecture; output power; power-added efficiency; pseudomorphic high electron mobility transistor; single-stage amplifier; uniform architecture; Design methodology; Distributed amplifiers; Foundries; High power amplifiers; Manufacturing processes; PHEMTs; Power amplifiers; Power generation; Semiconductor device manufacture; Semiconductor optical amplifiers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
