Title :
Wide-wavelength range detuning-adjusted DFB-LDs of different wavelengths fabricated on a wafer
Author :
Kudo, K. ; Yamazaki, H. ; Sasaki, T. ; Yamaguchi, M.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
We report for the first time different-wavelength distributed-feedback laser diodes (DFB-LDs) fabricated on a single wafer, whose lasing wavelengths cover the expanded erbium-doped fiber amplifier (EDFA) gain band from 1.52 to 1.59 μm with adjusted detuning between lasing-wavelengths and gain-peak-wavelengths. Uniform lasing characteristics such as a low-threshold current of less than 12 mA with stable single-mode oscillation of more than 35-dB side-mode suppression ratio (SMSR) are achieved for the 75-nm wavelength range.
Keywords :
current density; distributed feedback lasers; laser modes; laser transitions; laser tuning; optical fabrication; photoluminescence; quantum well lasers; 1.52 to 1.59 mum; 12 mA; EDFA; MQW active layer; adjusted detuning; different wavelengths; expanded Er-doped fiber amplifier gain band; fabrication; gain-peak-wavelengths; low-threshold current; side-mode suppression ratio; single wafer; stable single-mode oscillation; uniform lasing characteristics; wide-wavelength range detuning-adjusted DFB-LD; Diode lasers; Epitaxial growth; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Fabrication; Gratings; Lithography; Quantum well devices; Semiconductor lasers; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
