Title :
Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking
Author :
Liu, J.M. ; Chen, H.F. ; Meng, X.J. ; Simpson, T.B.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
Operating conditions for modulation bandwidth enhancement, noise reduction, and stable locking to be simultaneously fulfilled in a semiconductor laser subject to strong optical injection are investigated. When the strength of the injection signal is fixed, the optimum detuning of the injection frequency exists as a tradeoff between bandwidth enhancement and noise reduction. When the laser is injection-locked at a given value of frequency detuning in the stable locking region, both bandwidth enhancement and noise reduction are improved as the injection parameter is increased over a wide range.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; injection locked oscillators; laser frequency stability; laser mode locking; laser noise; optical bistability; optical modulation; quantum well lasers; semiconductor device noise; GaAs-AlGaAs; GaAs-AlGaAs quantum-well laser; modulation bandwidth enhancement; noise reduction; optimum injection frequency detuning; semiconductor laser; stability; stable locking; strong injection locking; Bandwidth; Frequency; Injection-locked oscillators; Laser noise; Laser stability; Laser theory; Noise reduction; Optical bistability; Semiconductor device noise; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
