Linewidth narrowing and optical phase control of mode-locked semiconductor ring laser employing optical injection locking

Author

Takada, A. ; Imajuku, Wataru

Author_Institution

NTT Opt. Network Syst. Lab., Kanagawa, Japan

Volume

9

Issue

10

fYear

1997

Firstpage

1328

Lastpage

1330

Abstract

The linewidth of the individual modes of an actively mode-locked extended-ring-cavity semiconductor laser is reduced from a free running linewidth of over 200-20 kHz by the injection of a narrow linewidth continuous-wave (CW) light. The optical phase of the injection-locked pulses can be controlled by adjusting the free-running optical frequency of the semiconductor ring laser. The variation in the optical phase of the output pulses versus the change of the free-running optical frequency is evaluated to be 0.57/spl pi/ radians within the locking range of about 96 MHz by observing temporal shape of the beat signal formed between output pulses and CW injection light.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; injection locked oscillators; laser mode locking; phase control; quantum well lasers; ring lasers; spectral line narrowing; 1.5 mum; 20 kHz; InGaAsP; InGaAsP MQW semiconductor laser amplifier; actively mode-locked extended-ring-cavity semiconductor laser; beat signal temporal shape; free running linewidth; free-running optical frequency; individual mode linewidth; linewidth narrowing; mode-locked semiconductor ring laser; narrow linewidth continuous-wave light injection; optical injection locking; optical phase control; Frequency; Laser mode locking; Optical control; Optical pulse shaping; Optical pulses; Optical variables control; Phase control; Ring lasers; Semiconductor lasers; Shape;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.623252

Filename

623252