High-power operation of InGaAsP-InP laser diode array at 1.73 μm

Author

Skidmore, J.A. ; Freitas, B.L. ; Reinhardt, C.E. ; Utterback, E.J. ; Page, R.H. ; Emanuel, M.A.

Author_Institution

California Univ., Livermore, CA, USA

Volume

9

Issue

10

fYear

1997

Firstpage

1334

Lastpage

1336

Abstract

InGaAsP-InP laser bars with an emission wavelength of 1.73 μm have been fabricated using compressively strained multiple-quantum-well (MQW) separate-confinement heterostructures (SCH). One-cm-wide, 0.7-fill-factor, diode bars are bonded onto Si microchannel heatsinks and stacked into a two-dimensional (2-D) laser array, 16 W of continuous-wave (CW) power was produced from a 1-cm bar and 200 W of peak power was generated from a 10-bar array with an emitting aperture of 1 cm².

Keywords

III-V semiconductors; gallium arsenide; heat sinks; indium compounds; optical fabrication; quantum well lasers; semiconductor laser arrays; 1 cm; 1.73 mum; 16 W; 200 W; CW power; InGaAsP-InP; InGaAsP-InP laser diode array; Si microchannel heatsinks; compressively strained MQW separate-confinement heterostructures; emission wavelength; high-power operation; microlensed array; two-dimensional laser array; Bars; Bonding; Diode lasers; Heat sinks; Microchannel; Optical arrays; Power lasers; Quantum well devices; Semiconductor laser arrays; Two dimensional displays;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.623254

Filename

623254