1.3-μm polarization insensitive amplifiers with integrated-mode transformers

Author

Tishinin, Dennis ; Uppal, Kushant ; In Kin ; Dapkus, P.Daniel

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

9

Issue

10

fYear

1997

Firstpage

1337

Lastpage

1339

Abstract

We report for the first time polarization-insensitive, mixed-strain quantum-well semiconductor optical amplifiers (QW SOAs) with monolithically integrated laterally tapered section for mode transformation. This taper section improves coupling efficiency to cleaved single-mode fibers by 3-4 dB compared to an untapered linear waveguide. We have demonstrated 18 dB chip gain with less that 1-dB polarization sensitivity of the gain. We also found that the output saturation power is about 10 dBm for all polarizations. The gain bandwidth was estimated to be 45 nm.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser modes; laser transitions; light polarisation; optical fibre couplers; optical saturation; optical transmitters; quantum well lasers; sensitivity; 1.3 mum; 1.3-/spl mu/m polarization insensitive amplifiers; InGaAsP; InGaAsP strained QW semiconductor optical amplifiers; chip gain; cleaved single-mode fibers; coupling efficiency; gain bandwidth; integrated-mode transformers; mixed-strain quantum-well semiconductor optical amplifiers; mode transformation; monolithically integrated laterally tapered section; optical fibre coupling; output saturation power; polarization sensitivity; polarization-insensitive; Etching; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Optical fiber devices; Optical fiber networks; Optical fiber polarization; Optical waveguides; Semiconductor optical amplifiers; Transformers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.623255

Filename

623255