Title :
1.3-μm polarization insensitive amplifiers with integrated-mode transformers
Author :
Tishinin, Dennis ; Uppal, Kushant ; In Kin ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
We report for the first time polarization-insensitive, mixed-strain quantum-well semiconductor optical amplifiers (QW SOAs) with monolithically integrated laterally tapered section for mode transformation. This taper section improves coupling efficiency to cleaved single-mode fibers by 3-4 dB compared to an untapered linear waveguide. We have demonstrated 18 dB chip gain with less that 1-dB polarization sensitivity of the gain. We also found that the output saturation power is about 10 dBm for all polarizations. The gain bandwidth was estimated to be 45 nm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser modes; laser transitions; light polarisation; optical fibre couplers; optical saturation; optical transmitters; quantum well lasers; sensitivity; 1.3 mum; 1.3-/spl mu/m polarization insensitive amplifiers; InGaAsP; InGaAsP strained QW semiconductor optical amplifiers; chip gain; cleaved single-mode fibers; coupling efficiency; gain bandwidth; integrated-mode transformers; mixed-strain quantum-well semiconductor optical amplifiers; mode transformation; monolithically integrated laterally tapered section; optical fibre coupling; output saturation power; polarization sensitivity; polarization-insensitive; Etching; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Optical fiber devices; Optical fiber networks; Optical fiber polarization; Optical waveguides; Semiconductor optical amplifiers; Transformers;
Journal_Title :
Photonics Technology Letters, IEEE
