Novel metal-semiconductor-metal photodetectors on bulk semi-insulating indium phosphide

Depositing Pd or An on InP at substrate temperatures near 77 K (LT) has previously been found to significantly reduce the interaction between the metal and semiconductor upon formation of the interface. In this letter, this technique was used to fabricate metal-semiconductor-metal photodetectors (MSMPDs) on semi-insulating (SI) InP substrates with superior characteristics compared to detectors formed using standard room temperature (RT) metal deposition. Detectors having a LT-Ps-SI-InP structure had a dark current of 80 nA at 5 V, which was a factor of 4 lower than the dark current of conventional MSMPDs. Additionally, LT-Pd-SI-InP MSMPDs exhibited excellent saturation characteristics and a responsivity of 0.75 A/W. Detectors with an indium-tin-oxide (ITO)-LT-Au (200 /spl Aring/)-SI-InP structure had a higher responsivity of 1.0 A/W, due to the relative transparency of this metallization. In contrast, MSMPDs with RT metallizations had poor saturation characteristics, consistent with the results of others. The difference in the illuminated characteristics of MSMPDs with RT and LT metallizations was due to a change in the internal photoconductive gain mechanism. In RT detectors, hole trapping at interface states near the cathode dominated the gain mechanism. In LT detectors, the difference in carrier transit-times dominated.