Title :
Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor
Author :
Dejun, Han ; Guohui, Li ; Yan Feng ; Zhu, En-jun
Author_Institution :
Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China
Abstract :
An avalanche enhanced AlGaAs-GaAs punchthrough heterojunction phototransistor with an improved guard-ring emitter structure has been proposed. It has demonstrated a record high sensitivity of 5790 A/W and optical conversion gain of 10810 at 400-nW incident optical power level. Its novel guard-ring emitter structure can suppress peripheral recombination current more effectively, provide capability to enhance and tune the optical conversion gain at low-incident optical power and reduce the effective emitter area.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photodetectors; phototransistors; sensitivity; 400 nW; AlGaAs-GaAs; avalanche enhanced phototransistor; effective emitter area reduction; guard-ring emitter structure; incident optical power level; optical conversion gain; peripheral recombination current suppression; sensitivity; ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor; Heterojunctions; Optical feedback; Optical modulation; Optical noise; Optical recording; Optical sensors; Phototransistors; Spontaneous emission; Stimulated emission; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
