Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor

Author

Dejun, Han ; Guohui, Li ; Yan Feng ; Zhu, En-jun

Author_Institution

Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China

Volume

9

Issue

10

fYear

1997

Firstpage

1391

Lastpage

1393

Abstract

An avalanche enhanced AlGaAs-GaAs punchthrough heterojunction phototransistor with an improved guard-ring emitter structure has been proposed. It has demonstrated a record high sensitivity of 5790 A/W and optical conversion gain of 10810 at 400-nW incident optical power level. Its novel guard-ring emitter structure can suppress peripheral recombination current more effectively, provide capability to enhance and tune the optical conversion gain at low-incident optical power and reduce the effective emitter area.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; photodetectors; phototransistors; sensitivity; 400 nW; AlGaAs-GaAs; avalanche enhanced phototransistor; effective emitter area reduction; guard-ring emitter structure; incident optical power level; optical conversion gain; peripheral recombination current suppression; sensitivity; ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor; Heterojunctions; Optical feedback; Optical modulation; Optical noise; Optical recording; Optical sensors; Phototransistors; Spontaneous emission; Stimulated emission; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.623273

Filename

623273