Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology

Author

Dentan, M. ; Abbon, P. ; Borgeaud, P. ; Delagnes, E. ; Fourches, N. ; Lachartre, D. ; Lugiez, F. ; Paul, B. ; Rouger, M. ; Truche, R. ; Blanc, J.P. ; Faynot, O. ; Leroux, C. ; Delevoye-Orsie, E. ; Pelloie, JL ; de Pontcharra, J. ; Flament, O. ; Guebhard,

Author_Institution

CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France

Volume

46

Issue

4

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

822

Lastpage

828

Abstract

DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >10¹⁴ neutron/cm²) vertical bipolar, 0.8 μm CMOS and 1.2 μm PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL program goal, we discuss in more detail the main technological choices, the main milestones from the R&D to the industrial implementation, and the main results obtained after stabilization of the final process-flow in the MHS foundry

Keywords

CMOS analogue integrated circuits; CMOS digital integrated circuits; JFET integrated circuits; bipolar analogue integrated circuits; bipolar digital integrated circuits; mixed analogue-digital integrated circuits; nuclear electronics; silicon-on-insulator; CMOS-JFET-bipolar radiation-hard technology; DMILL technology; PJFET transistors; analog-digital SOI technology; industrial stabilization; industrial transfer; mixed analog-digital integrated circuits; nuclear electronics; Aerospace industry; Analog-digital conversion; CMOS technology; Circuits; Foundries; Large Hadron Collider; Microelectronics; Radiation hardening; Space technology; Springs;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.790685

Filename

790685