Hall effect analysis in irradiated silicon samples with different resistivities

Author

Borchi, E. ; Bruzzi, M. ; Dezillie, B. ; Lazanu, S. ; Li, Z. ; Pirollo, S.

Author_Institution

Dipt. di Energetica, Ist. Nazionale di Fisica Nucl., Firenze, Italy

Volume

46

Issue

4

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

834

Lastpage

838

Abstract

The changes induced by neutron irradiation in n- and p-type silicon samples with starting resistivities from 10 Ω-cm up to 30 kΩ-cm, grown using different techniques, as float-zone (FZ), Czochralski (CZ) and epitaxial, have been analyzed by Van der Pauw and Hall effect measurements. Increasing the fluence, each set of samples evolves toward a quasi-intrinsic p-type material. This behavior has been explained in the frame of a two-level model, that considers the introduction during irradiation of mainly two defects. A deep acceptor and a deep donor, probably related to the divacancy and to the C_iO_i complex, are placed in the upper and lower half of the forbidden gap, respectively. This simple model explains quantitatively the data on resistivity and Hall coefficient of each set of samples up to the fluence of ≈10¹⁴ n/cm²

Keywords

Hall effect; deep levels; defect states; elemental semiconductors; energy gap; impurity states; neutron effects; silicon; vacancies (crystal); Hall effect; Si; Van der Pauw effect; deep acceptor; deep donor; divacancy; forbidden gap; n-type material; neutron irradiation; quasiintrinsic p-type material; two-level model; Annealing; Conductivity; Hall effect; Laboratories; Large Hadron Collider; Magnetic field measurement; Neutrons; Physics; Semiconductor process modeling; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.790687

Filename

790687