Title :
Development of radiation-hard materials for microstrip detectors
Author :
Dubbs, T. ; Kroeger, W. ; Nissen, T. ; Pulliam, T. ; Roberts, D. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Thomas, B. ; Webster, A. ; Alers, G.
Author_Institution :
SCIPP, California Univ., Santa Cruz, CA, USA
fDate :
8/1/1999 12:00:00 AM
Abstract :
We present the search for new detector materials, which would replace silicon as the bulk material in strip detectors for application in high radiation fields. The investigation focuses on SiC, a material with higher bandgap and thus less degradation after irradiation when compared with silicon. Both static properties like the capacitance and leakage currents and dynamic measurements of the charge collection with low-noise amplifiers are presented
Keywords :
position sensitive particle detectors; semiconductor counters; silicon compounds; wide band gap semiconductors; SiC; capacitance; charge collection; dynamic measurements; high radiation fields; leakage currents; microstrip detectors; radiation-hard materials; static properties; Capacitance measurement; Current measurement; Degradation; Leakage current; Microstrip; Photonic band gap; Radiation detectors; Silicon carbide; Silicon radiation detectors; Strips;
Journal_Title :
Nuclear Science, IEEE Transactions on
