Monte Carlo investigation of the charge sharing effects in 3-D position sensitive CdZnTe gamma ray spectrometers

Author

Du, Y.E. ; He, Z. ; Li, W. ; Knoll, G.F. ; Wehe, D.K.

Author_Institution

Dept. of Nucl. Eng., Michigan Univ., Ann Arbor, MI, USA

Volume

46

Issue

4

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

844

Lastpage

847

Abstract

Charge sharing effects in a 3-D position sensitive CdZnTe detector have been investigated by Monte Carlo simulations and experimental measurements. The charge sharing is mainly caused by the range of electrons, X-ray emission following by photoelectric interactions, and the diffusion of charge carrier electrons during their drift towards the anodes. A simple model has been developed to include the diffusion effect in the Monte Carlo simulation. Good agreement has been achieved for various irradiation and bias conditions. Based on our model simulations, a 1 mm optimal pixel size is recommended for future 1 cm thick CZT detectors for 662 keV gamma rays

Keywords

II-VI semiconductors; Monte Carlo methods; cadmium compounds; gamma-ray detection; gamma-ray spectrometers; position sensitive particle detectors; semiconductor counters; zinc compounds; 3D position sensitive gamma ray spectrometers; 662 keV; CdZnTe; Monte Carlo investigation; charge sharing effects; diffusion effect; optimal pixel size; photoelectric interactions; Anodes; Charge carriers; Charge measurement; Current measurement; Electron emission; Gamma ray detection; Gamma ray detectors; Monte Carlo methods; Position measurement; Position sensitive particle detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.790689

Filename

790689