Title :
Charging damage from plasma enhanced TEOS deposition
Author :
Cheung, Kin P. ; Pai, C.S.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
Serious n-channel transistor hot-carrier lifetime degradation due to plasma-charging damage during PETEOS deposition is reported for the first time. Contrary to conventional wisdom, a dielectric film thickness dependent damage is observed. A new mechanism for charging-damage during plasma deposition of dielectric is proposed. This new mechanism uses photoconduction to explain why the antennae continue to charge up after a layer of dielectric is deposited on top. Some numerical estimation is provided.
Keywords :
MOSFET; 0.35 mum; CMOS process; PETEOS deposition; antennae charging; dielectric film; dielectric film thickness dependent damage; hot carrier reliability; n-channel transistor hot-carrier lifetime degradation; nMOSFET; numerical estimation; photoconduction mechanism; plasma CVD; plasma deposition; plasma-charging damage; Annealing; Antenna measurements; CMOS process; Degradation; Dielectrics; Hot carriers; Metallization; Plasma devices; Plasma materials processing; Testing;
Journal_Title :
Electron Device Letters, IEEE
