Title :
The dual gate base resistance controlled thyristor
Author :
Baliga, B.J. ; Kurlagunda, Ravi
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
A new device concept, called the dual gate base resistance controlled thyristor (DG-BRT), is introduced for simultaneously obtaining the low on-state voltage drop of a thyristor together with a good forward biased safe operating area. The two gates are used to control an N-channel and a P-channel MOSFET integrated with a thyristor structure using the DMOS process. When a positive bias is applied to both gates, the device operates in the thyristor-mode with a low on-state voltage drop at even high current densities. When a negative bias is applied to the OFF-gate, the device operates in the IGBT-mode with the saturated current controlled by the positive bias applied to the ON-gate. The results of two-dimensional numerical simulations and measurements performed on devices with 600 V forward blocking capability are reported.
Keywords :
MOS-controlled thyristors; 600 V; DMOS process integration; IGBT-mode operation; N-channel MOSFET; P-channel MOSFET; dual gate base resistance controlled thyristor; forward biased safe operating area; forward blocking capability; low on-state voltage drop; negative bias; positive bias; saturated current control; thyristor-mode operation; turn-off switching transients; turn-on switching transients; two-dimensional numerical simulation; Current density; Electrons; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Numerical simulation; Performance evaluation; Power electronics; Thyristors; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
