Title :
High voltage 4H-SiC Schottky barrier diodes
Author :
Raghunathan, R. ; Alok, D. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
Characteristics of 4H-SiC Schottky barrier diodes with breakdown voltages up to 1000 V are reported for the first time. The diodes showed excellent forward I-V characteristics, with a forward voltage drop of 1.06 V at an on-state current density of 100 A/cm/sup 2/. The specific on-resistance for these diodes was found to be low (2/spl times/10/sup -3/ /spl Omega/-cm/sup 2/ at room temperature) and showed a T/sup 1.6/ variation with temperature. Titanium Schottky barrier height was determined to be 0.99 eV independent of the temperature. The breakdown voltage of the diodes was found to decrease with temperature.
Keywords :
silicon compounds; 1000 V; 300 to 473 K; 4H-SiC Schottky barrier diodes; Ti Schottky barrier height; Ti-SiC; breakdown voltage; forward I-V characteristics; forward voltage drop; high voltage diodes; on-state current density; specific on-resistance; temperature variation; Artificial intelligence; Breakdown voltage; Current density; Electron mobility; Low voltage; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
