Title :
Electromigration characteristics of TiN barrier layer material
Author :
Tao, Jiang ; Cheung, Nathan W. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
Electromigration reliability of TiN barrier layer itself has been studied. Our results show no electrically measurable electromigration. Resistance increase and open failure under high density current stress are apparently due to a purely thermally activated process with an activation energy of 1.5 eV. TiN resistance is projected to be stable for 10 years if the temperature of the hottest spot in TiN is kept below 408/spl deg/C, which together with electrical sheet resistance and thermal resistance determine the acceptable current density in TiN.
Keywords :
titanium compounds; 10 year; 408 C; 65 muohmcm; IC interconnect; TiN; TiN barrier layer material; TiN resistance stability; acceptable current density; activation energy; electrical sheet resistance; electromigration reliability; high density current stress; hot spot temperature; multilayer metallization; open failure; resistance increase; thermal resistance; thermally activated process; Current density; Electric resistance; Electromigration; Metallization; Temperature; Testing; Thermal resistance; Thermal stresses; Tin; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
