Title :
Nitridation of the stacked poly-Si gate to suppress the boron penetration in pMOS
Author :
Lin, Yung Hao ; Lai, Chao Sung ; Lee, Chung Len ; Lei, Tan Fu ; Chao, Tien Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/1/1995 12:00:00 AM
Abstract :
Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF/sub 2//sup +/-implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.
Keywords :
silicon; B penetration suppression; BF/sub 2//sup +/ gate implantation; MOS capacitors; N-rich layers; Si-SiNO; Si:BF/sub 2/; electrical characteristics; nitridation; stacked poly-Si gate; submicron CMOS; thermal stability; Annealing; Boron; CMOS technology; Capacitance-voltage characteristics; Chaos; Electric variables; Electrons; MOS capacitors; Nitrogen; Thermal stability;
Journal_Title :
Electron Device Letters, IEEE
