Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT´s with wide head T-shaped gate

Author

Jin-Hee Lee ; Hyung-Sup Yoon ; Chul-Soon Park ; Hyung-Moo Park

Author_Institution

Semicond. Div., Electron. & Telecommun. Res. Inst., Taejeon, South Korea

Volume

16

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

271

Lastpage

273

Abstract

The fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with 0.13 μm T-shaped gate was fabricated using dose split electron beam lithography method (DSM). This device exhibited low noise figures of 0.31 and 0.45 dB at 12 and 18 GHz, respectively. These noise figures are the lowest value ever reported for the GaAs based HEMT´s. These results are attributed to the extremely low gate resistance which results from wide head T-shaped gate having the higher ratio more than 10 of gate head length to gate footprint.

Keywords

semiconductor device noise; 0.13 micron; 0.31 dB; 0.45 dB; 12 GHz; 18 GHz; AlGaAs-InGaAs-GaAs; dose split electron beam lithography method; fully passivated devices; gate footprint; gate head length; gate resistance; microwave transistors; noise characteristics; noise figures; pseudomorphic HEMT; wide head T-shaped gate; Electron beams; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; Lithography; Noise figure; Resists; Satellite broadcasting; Semiconductor device noise;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.790732

Filename

790732