Title :
Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT´s with wide head T-shaped gate
Author :
Jin-Hee Lee ; Hyung-Sup Yoon ; Chul-Soon Park ; Hyung-Moo Park
Author_Institution :
Semicond. Div., Electron. & Telecommun. Res. Inst., Taejeon, South Korea
fDate :
6/1/1995 12:00:00 AM
Abstract :
The fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with 0.13 μm T-shaped gate was fabricated using dose split electron beam lithography method (DSM). This device exhibited low noise figures of 0.31 and 0.45 dB at 12 and 18 GHz, respectively. These noise figures are the lowest value ever reported for the GaAs based HEMT´s. These results are attributed to the extremely low gate resistance which results from wide head T-shaped gate having the higher ratio more than 10 of gate head length to gate footprint.
Keywords :
semiconductor device noise; 0.13 micron; 0.31 dB; 0.45 dB; 12 GHz; 18 GHz; AlGaAs-InGaAs-GaAs; dose split electron beam lithography method; fully passivated devices; gate footprint; gate head length; gate resistance; microwave transistors; noise characteristics; noise figures; pseudomorphic HEMT; wide head T-shaped gate; Electron beams; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; Lithography; Noise figure; Resists; Satellite broadcasting; Semiconductor device noise;
Journal_Title :
Electron Device Letters, IEEE
