High performance of high-voltage 4H-SiC Schottky barrier diodes

Author

Itoh, Akira ; Kimoto, Tsunenobu ; Matsunami, Hiroyuki

Author_Institution

Dept. of Electr. Eng., Kyoto Univ., Japan

Volume

16

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

280

Lastpage

282

Abstract

High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes. A typical specific on-resistance (R/sub on/) of these devices was 1.4/spl times/10/sup 3/ /spl Omega/ cm/sup 3/ at 24/spl deg/C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R/sub on/´s lower than 6H-SiC based high-power rectifiers with the same breakdown voltage. As for Schottky contact metals, Au, Ni, and Ti were employed in this study. The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights.

Keywords

silicon compounds; 24 degC; 800 V; Au-SiC; Ni-SiC; Schottky barrier diodes; Schottky contact metals; Ti-SiC; barrier heights; breakdown voltages; current-voltage characteristics; high-voltage rectifiers; power loss reduction; specific on-resistance; Electron mobility; Epitaxial growth; Gold; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.790735

Filename

790735