Title :
A 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT)
Author :
Parthasarathy, Vijay ; Bhalla, Anup ; Chow, T. Paul
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
In this paper we report a 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT), which incorporates a heavily doped p-type diffusion at the edges of the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in this new device along with separate turn-on and turn-off regions. A 70% improvement in the maximum controllable current density during resistive turn-off over the conventional BRT has been demonstrated in numerical simulations and experimental measurements.
Keywords :
MOS-controlled thyristors; 550 V; gate controlled turn-off features; gate controlled turn-on features; heavily doped p-type diffusion; isolated channel base resistance controlled thyristor; maximum controllable current density; numerical simulations; turn-off capability; Cathodes; Current density; Electric resistance; Electrons; Implants; Insulated gate bipolar transistors; MOSFET circuits; Modeling; Numerical simulation; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
