Title :
10 Gbit/s AlGaAs/GaAs HBT driver IC for lasers or lightwave modulators
Author :
Montgomery, R.K. ; Ren, Fengyuan ; Abernathy, C.R. ; Fullowan, T.R. ; Kopf, R.F. ; Smith, Peter ; Pearton, S.J. ; Wisk, Patrick ; Lothian, J. ; Nottenburg, R.N. ; Nguyen, Troy V.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
A 10 Gbit/s driver IC for lasers or lightwave modulators has been implemented using carbon-doped base AlGaAs/GaAs HBTs. The integrated circuit is intended for applications involving either direct or external modulation of laser sources. The circuit is capable of driving 60 mA into a 50 Omega load with rise/fall times of 40 ps and generates a differential output voltage of 6 V peak to peak at 10 Gbit/s. Modifying the design slightly, a 9 V peak to peak differential output was achieved at 5 Gbit/s by switching 90 mA into a 50 Omega load.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; driver circuits; gallium arsenide; laser accessories; optical communication equipment; optical modulation; 10 Gbit/s; 40 ps; 5 Gbit/s; 6 V; 60 mA; 9 V; 90 mA; AlGaAs-GaAs; HBT driver IC; differential output voltage; external modulation; fall time; lasers; lightwave communication; lightwave modulators; rise time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911135
