DocumentCode :
1554412
Title :
4 V, 5 mA low drop-out regulator using series-pass n-channel MOSFET
Author :
Salmi, K. ; Scarabello, C. ; Chevalerias, O. ; Rodes, F.
Author_Institution :
Lab. IXL, Talence, France
Volume :
35
Issue :
15
fYear :
1999
fDate :
7/22/1999 12:00:00 AM
Firstpage :
1214
Lastpage :
1215
Abstract :
A MOSFET low drop-out (LDO) regulator is considered. Limitations on the use of conventional regulators for intracorporal applications are discussed. An improved regulator is described. Design guidelines are suggested and simulation results are presented
Keywords :
biocontrol; biomedical electronics; biomedical telemetry; controllers; electric current control; power MOSFET; 4 V; 5 mA; current regulator; design guidelines; implantable telemetry; improved regulator; inductive powering system; intracorporal applications; low drop-out regulator; regulator limitations; series-pass n-channel MOSFET; simple doubler topology; simulation; transient analysis;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990843
Filename :
790755
Link To Document :
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