• DocumentCode
    1554417
  • Title

    In0.52Al0.48As/In0.53Ga0.47As lateral resonant tunnelling transistor

  • Author

    Seabaugh, A.C. ; Randall, J.N. ; Kao, Y.-C. ; Bouchard, A.M.

  • Author_Institution
    Central Res. Lab., Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    27
  • Issue
    20
  • fYear
    1991
  • Firstpage
    1832
  • Lastpage
    1834
  • Abstract
    The first fabrication and characterisation are reported for a lateral resonant tunnelling transistor formed in the In0.52Al0.48As/In0.53Ga0.47As system lattice-matched to InP. Strong multiple negative differential resistances (NDR) and transconductances are observed indicative of resonant tunnelling across depletion-defined tunnel-barriers in the channel of a two-dimensional electron gas. Calculations of the potential energy surface and quasibound state spectrum for this heterostructure provide qualitative understanding of the device operation and close agreement with the measured multiple-NDR peak spacings.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; negative resistance; resonant tunnelling devices; In 0.52Al 0.48As-In 0.53Ga 0.47As; InP; depletion-defined tunnel-barriers; dual gate MODFET; lateral resonant tunnelling transistor; multiple negative differential resistances; potential energy surface; quasibound state spectrum; transconductances; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911139
  • Filename
    97205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1554417