Title :
High-sweep-rate 1310 nm MEMS-VCSEL with 150 nm continuous tuning range
Author :
Jayaraman, Vijaysekhar ; Cole, Graham D. ; Robertson, Martin ; Uddin, Ahsan ; Cable, Alex
Author_Institution :
Praevium Res., Inc., Santa Barbara, CA, USA
Abstract :
Microelectromechanical-systems-based vertical-cavity surface-emitting lasers (MEMS-VCSELs) capable of a 150 nm continuous tuning range near 1310 nm are demonstrated. These devices employ a thin optically pumped active region structure with large free-spectral range, which promotes wide and continuous tuning. To achieve VCSEL emission at 1310 nm, a wide-gain-bandwidth indium phosphide-based multiple quantum well active region is combined with a wide-bandwidth fully oxidised GaAs-based mirror through wafer bonding, with tuning enabled by a suspended dielectric top mirror. These devices are capable of being scanned over the entire tuning range at frequencies up to 500 kHz, making them ideal for applications such as swept source optical coherence tomography and high-speed transient spectroscopy.
Keywords :
III-V semiconductors; circuit tuning; dielectric materials; gallium arsenide; micromechanical devices; mirrors; semiconductor quantum wells; surface emitting lasers; wafer bonding; GaAs; MEMS-VCSEL; VCSEL emission; continuous tuning range; free-spectral range; high-speed transient spectroscopy; high-sweep-rate; microelectromechanical-systems-based vertical-cavity surface-emitting laser; size 1310 mm; size 150 nm; suspended dielectric top mirror; swept source optical coherence tomography; thin optically pumped active region structure; wafer bonding; wide-gain-bandwidth indium phosphide-based multiple quantum well active region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1552