GaAsSbN: a new low-bandgap material for GaAs substrates

Author

Ungaro, G. ; Le Roux, G. ; Teissier, R. ; Harmand, J.C.

Author_Institution

Lab. de Bagneux, CNET, Bagneux, France

Volume

35

Issue

15

fYear

1999

fDate

7/22/1999 12:00:00 AM

Firstpage

1246

Lastpage

1248

Abstract

A new low-bandgap III-V compound grown on GaAs (GaAsSbN) has been investigated. Strained quantum wells were realised by molecular beam epitaxy with a nitrogen plasma source. The influence of Sb content on the level of nitrogen incorporation has been examined and no strong dependence was found. This material offers an interesting alternative to InGaAsN for developing 1.3 and 1.55 μm laser sources on GaAs substrates: a GaAs_0.729Sb_0.259N_0.012/GaAs quantum well has exhibited a room-temperature photoluminescence peak wavelength as long as 1.52 μm. This emission is shifted to 1.3 μm after post-growth annealing

Keywords

III-V semiconductors; energy gap; gallium arsenide; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor quantum wells; 1.3 micron; 1.55 micron; GaAs; GaAs_0.729Sb_0.259N_0.012-GaAs; GaAs_0.729Sb_0.259N_0.012/GaAs quantum well; GaAsSbN; Sb content influence; conduction band offset; laser sources on GaAs substrates; level of nitrogen incorporation; low-bandgap III-V compound; molecular beam epitaxy; post-growth annealing; room-temperature photoluminescence; strained quantum wells;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19990864

Filename

790777