Title :
GaAsSbN: a new low-bandgap material for GaAs substrates
Author :
Ungaro, G. ; Le Roux, G. ; Teissier, R. ; Harmand, J.C.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
7/22/1999 12:00:00 AM
Abstract :
A new low-bandgap III-V compound grown on GaAs (GaAsSbN) has been investigated. Strained quantum wells were realised by molecular beam epitaxy with a nitrogen plasma source. The influence of Sb content on the level of nitrogen incorporation has been examined and no strong dependence was found. This material offers an interesting alternative to InGaAsN for developing 1.3 and 1.55 μm laser sources on GaAs substrates: a GaAs0.729Sb0.259N0.012/GaAs quantum well has exhibited a room-temperature photoluminescence peak wavelength as long as 1.52 μm. This emission is shifted to 1.3 μm after post-growth annealing
Keywords :
III-V semiconductors; energy gap; gallium arsenide; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor quantum wells; 1.3 micron; 1.55 micron; GaAs; GaAs0.729Sb0.259N0.012-GaAs; GaAs0.729Sb0.259N0.012/GaAs quantum well; GaAsSbN; Sb content influence; conduction band offset; laser sources on GaAs substrates; level of nitrogen incorporation; low-bandgap III-V compound; molecular beam epitaxy; post-growth annealing; room-temperature photoluminescence; strained quantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990864
