Title :
1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition
Author :
Sato, S. ; Satoh, S.
Author_Institution :
Gen. Electron. Res. & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan
fDate :
7/22/1999 12:00:00 AM
Abstract :
1.3 μm continuous-wave operation of highly strained GaInNAs/GaAs double quantum-well lasers grown by metal organic chemical vapour deposition has been demonstrated. The threshold current and threshold current density of the 700 μm long laser at 20°C were 63 mA and 1.2 kA/cm2, respectively. These are the lowest values ever reported for 1.3 μm GaInNAs/GaAs lasers under continuous wave operation. Characteristic temperatures as high as 128 K were observed under continuous-wave operation
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; 1.3 micrometre; 128 K; 20 degC; 63 mA; 700 micron; GaInNAs-GaAs; III-V semiconductors; characteristic temperatures; continuous-wave operation; highly strained double quantum-well lasers; metal organic chemical vapour deposition; threshold current; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990858
