Title :
High-power interband cascade lasers with quantum efficiency >450%
Author :
Yang, R.Q. ; Bruno, J.D. ; Bradshaw, J.L. ; Pham, J.T. ; Wortman, D.E.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
fDate :
7/22/1999 12:00:00 AM
Abstract :
Mid-IR (3.8-3.9 μm) interband cascade lasers based on InAs/GaInSb heterostructures have been demonstrated at temperatures up to 210 K. The authors have observed a peak optical output power of ~2 W/facet from one device at 80 K, and from another device at 150 K, a slope of 735 mW/A per facet, corresponding to a differential external quantum efficiency of 456%
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser transitions; quantum well lasers; 150 K; 210 K; 3.8 to 3.9 micron; 80 K; InAs-GaInSb; InAs/GaInSb heterostructures; differential external quantum efficiency; high-power lasers; mid-IR interband cascade lasers; peak optical output power; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990880
