Title :
Observation of power dependent linewidth enhancement factor in 1.55 mu m strained quantum well lasers
Author :
Nakajima, H. ; Bouley, J.-C.
Author_Institution :
Lab. de Bagneux, CNET, France
Abstract :
An optical power dependence of the linewidth enhancement factor in 1.55 mu m strained multiquantum well distributed feedback lasers operating at far above the lasing threshold (up to 10.5 times) has been observed. The linewidth enhancement factor, measured through optical injection locking, increases significantly at high power. A correlation between increase in the linewidth enhancement factor and the linewidth floor is shown.
Keywords :
distributed feedback lasers; semiconductor junction lasers; spectral line breadth; 1.55 micron; In xGa 1-xAs-InGaAsP; lasing threshold; linewidth enhancement factor; optical injection locking; optical power dependence; strained multiquantum well distributed feedback lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911143
