Title :
Improved temperature characteristics of 1.55 μm InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer
Author :
Chyi, Jen-Inn ; Chen, Ming-Hong ; Pan, Jen-Wei ; Shih, Tien-Tsorng
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
7/22/1999 12:00:00 AM
Abstract :
A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 μm InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77 K is measured between 25 and 75°C for as-cleaved 1000 μm-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; quantum well lasers; 1.55 micron; 1000 micron; 25 to 75 C; 77 K; InAlGaAs; as-cleaved uncoated devices; characteristic temperature; graded-index SCH; improved temperature characteristics; multiquantum barrier; p-cladding layer; quantum well lasers; slope efficiency degradation; solid source MBE; temperature sensitivity; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990335
