• DocumentCode
    1554553
  • Title

    Aluminium passivation for TMAH based anisotropic etching for MEMS applications

  • Author

    Lian, K. ; Stark, B. ; Gundlach, A.M. ; Walton, A.J.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Edinburgh Univ., UK
  • Volume
    35
  • Issue
    15
  • fYear
    1999
  • fDate
    7/22/1999 12:00:00 AM
  • Firstpage
    1266
  • Lastpage
    1267
  • Abstract
    The addition of water glass (64g SiO2/l) and ammonium persulfate (5 g/l) to TMAH (5 wt.%) for silicon anisotropic etching has been shown to passivate aluminium in the same manner as solid silicon or silicic acid. 1 h of etching results in an Si (1,0,0) etch rate of 1.1 μm/min, and a surface roughness of <100 nm, making it suitable for MEMS applications
  • Keywords
    aluminium; elemental semiconductors; etching; micromechanical devices; organic compounds; passivation; rough surfaces; silicon; Al passivation; MEMS applications; Si; SiO2; TMAH based anisotropic etching; ammonium persulfate; silicon anisotropic etching; surface roughness; water glass;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990744
  • Filename
    790790
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1554553