Title :
Aluminium passivation for TMAH based anisotropic etching for MEMS applications
Author :
Lian, K. ; Stark, B. ; Gundlach, A.M. ; Walton, A.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Edinburgh Univ., UK
fDate :
7/22/1999 12:00:00 AM
Abstract :
The addition of water glass (64g SiO2/l) and ammonium persulfate (5 g/l) to TMAH (5 wt.%) for silicon anisotropic etching has been shown to passivate aluminium in the same manner as solid silicon or silicic acid. 1 h of etching results in an Si (1,0,0) etch rate of 1.1 μm/min, and a surface roughness of <100 nm, making it suitable for MEMS applications
Keywords :
aluminium; elemental semiconductors; etching; micromechanical devices; organic compounds; passivation; rough surfaces; silicon; Al passivation; MEMS applications; Si; SiO2; TMAH based anisotropic etching; ammonium persulfate; silicon anisotropic etching; surface roughness; water glass;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990744
