DocumentCode :
1554573
Title :
Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh
Author :
Chen, Yen-Ann ; Hsu, Ming-Lung ; Laih, Li-Hong ; Hong, Jyh-Wong ; Chang, Chun-Yen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Volume :
35
Issue :
15
fYear :
1999
fDate :
7/22/1999 12:00:00 AM
Firstpage :
1274
Lastpage :
1275
Abstract :
A conventional plasma-enhanced chemical vapour deposition (PECVD) system with a stainless steel mesh attached to a cathode was used to fabricate an SiC-based thin-film light-emitting diode (TFLED) at a low temperature (~180°C). The obtained TFLED had a brightness (B) of 1060 cd/m2 at an injection current density (J) of 600 mA/cm 2 and a threshold voltage (Vth) of 12.6 V, which were much better than those of 330 cd/m2 and 18.5 V for an amorphous SiC-based TFLED fabricated by the same PECVD system without a stainless steel mesh
Keywords :
brightness; current density; light emitting diodes; plasma CVD; silicon compounds; thin film devices; 12.6 V; 180 degC; PECVD; SiC; SiC-based thin-film LED; SiC-based thin-film light-emitting diode; TFLED; brightness; injection current density; low temperature; plasma-enhanced CVD system; plasma-enhanced chemical vapour deposition; stainless steel mesh; threshold voltage;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990786
Filename :
790795
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1554573
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