DocumentCode
1554589
Title
MOS noise performance under impedance matching constraints
Author
Janssens, J. ; Steyaert, H.
Author_Institution
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
Volume
35
Issue
15
fYear
1999
fDate
7/22/1999 12:00:00 AM
Firstpage
1278
Lastpage
1280
Abstract
MOS noise performance under source matching constraints is analysed for an improved impedance matching scheme, using both classical and non-quasistatic noise models. The tradeoff between achieving a low noise figure and a high power gain when preserving a source match is investigated and clarified
Keywords
MOSFET; impedance matching; semiconductor device models; semiconductor device noise; MOS transistor; classical noise model; impedance matching; noise figure; nonquasistatic noise model; power gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990837
Filename
790799
Link To Document