New approach to the frequency response analysis of an InGaAs avalanche photodiode

Author

Shiba, T. ; Ishimura, E. ; Takahashi, K. ; Namizaki, H. ; Susaki, W.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

6

Issue

10

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

1502

Lastpage

1506

Abstract

The frequency response of an avalanche photodiode has been calculated by solving the transport equations, taking the electric field profile into account. The relationship between the carrier concentration (Nb) in the multiplication layer and the frequency response has been obtained for the first time. This calculation has been carried out for a conventional In_0.53Ga_0.47As avalanche photodiode. The results explain well present experimental data. The saturation velocity of holes in InP is estimated to be 2×10⁶ cm/s. The upper limitation of the gain-bandwidth product is estimated to be 140 GHz at Nb=2×10¹⁷ cm^-3

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; 140 GHz; III-V semiconductors; In_0.53Ga_0.47As; avalanche photodiode; carrier concentration; electric field profile; frequency response analysis; gain-bandwidth product; holes; saturation velocity; Absorption; Avalanche photodiodes; Bandwidth; Equations; Frequency response; Indium gallium arsenide; Indium phosphide; Ionization; Niobium; Optical fiber communication;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.7908

Filename

7908