Title :
Recovery of degradation in II-VI laser diode structure
Author :
Jordan, C. ; McCabe, E.M. ; Donegan, J.F. ; Nakano, K. ; Ishibashi, A. ; Itoh, S.
Author_Institution :
Dept. of Phys., Trinity Coll., Dublin, Ireland
fDate :
7/22/1999 12:00:00 AM
Abstract :
Under high carrier and optical excitation (1019 cm-3), II-VI and As, P-based III-V light-emitting structures exhibit a slow degradation due to recombination-enhanced defect reactions. The authors have found, using II-VI laser structures, that this degradation can be partially recovered with excitation at low carrier densities (5×1016 cm-3)
Keywords :
II-VI semiconductors; carrier density; electron-hole recombination; semiconductor lasers; II-VI laser diode; carrier density; carrier excitation; degradation recovery; light emitting structure; optical excitation; recombination-enhanced defect reaction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990862
