Title :
SOL thickness dependence of residual strain in SOI material
Author :
Camassel, J. ; Planes, N. ; Falkovsky, L. ; Moller, H. ; Eickhoff, M. ; Krötz, G.
Author_Institution :
CNRS, Montpellier, France
fDate :
7/22/1999 12:00:00 AM
Abstract :
The structural properties of commercial SOI (silicon on insulator) wafers have been investigated against SOL (silicon over-layer) thickness. It is found that the upper part of a standard SOI material constantly exhibits a rather large amount of residual stress. It is shown that the repartitions of residual stresses depend on the final SOL thickness
Keywords :
internal stresses; silicon-on-insulator; SOI material; SOL thickness dependence; Si; residual strain; residual stress; silicon on insulator wafer; silicon over-layer; structural properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990868
