Short cavity InP-lasers with 2D photonic crystal mirrors

Author

Happ, T.D. ; Markard, A. ; Kamp, M. ; Gentner, J.L. ; Forchel, A.

Author_Institution

Wurzburg Univ., Germany

Volume

148

Issue

4

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

183

Lastpage

187

Abstract

Compact, high performance light sources are a key building block for future use in highly integrated photonic circuits. We have fabricated inplane emitting InP-based microlasers with cavity lengths of 600-100 μm. The required high reflectivity mirrors consist of a 2D ΓM-oriented triangular photonic crystal (PC) of air rods with lattice constants in the range 275-350 nm. The lasers with the optimum PC period operate CW at room temperature with a threshold current Of I _th=29 mA and output power up to 4 mW for the shortest devices. The optimum performance with I_th=24 mA and output power exceeding 12 mW is achieved for 200 μm long devices. This dependence of laser characteristics on cavity length and PC properties is discussed. A lower limit for the reflectivity of the PC mirror is extracted from the laser performance data. In addition, an analysis of the high frequency dynamic properties relative intensity noise (RIN) and modulation bandwidth is presented

Keywords

III-V semiconductors; indium compounds; integrated optics; laser mirrors; laser noise; microcavity lasers; photonic band gap; quantum well lasers; 12 mW; 200 micron; 24 mA; 275 to 350 nm; 2D ΓM-oriented triangular photonic crystal; 2D photonic crystal mirrors; 4 mW; 600 to 100 micron; CW; InGaAsP-InP; InP; MBE-grown QW SCH laser structure; PC properties; air rods; cavity length; cavity lengths; compact high performance light sources; high frequency dynamic properties relative intensity noise; high reflectivity mirrors; highly integrated photonic circuits; inplane emitting InP-based microlasers; laser characteristics; lattice constants; modulation bandwidth; optimum PC period; optimum performance; output power; room temperature; short cavity InP-lasers; threshold current;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20010575

Filename

972130