Title :
Linearised InGaP/GaAs HBT MMIC power amplifier with active bias circuit for W-CDMA application
Author :
Noh, Y.S. ; Park, C.S.
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Taejon, South Korea
fDate :
12/6/2001 12:00:00 AM
Abstract :
A high linearity InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier is demonstrated using a new structure for a bias circuit for wideband-code division multiple access (W-CDMA) application. A one shunt capacitor is added to a novel active bias circuit and acts as a lineariser improving input P1 dB of 16 dB and phase distortion of 5.1° for the hybrid phase shift keying (HPSK) modulated signal at the 28 dBm output power; the lineariser showing no significant increase of signal loss and chip area. The two-stage HBT MMIC amplifier exhibits a power-added efficiency (PAE) of 37%, a linear power gain of 24.5 dB, and an output power of 28 dBm with an adjacent channel power ratio (ACPR) of -45 dBc, under a 3 V operation voltage
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; code division multiple access; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; linearisation techniques; mobile radio; phase shift keying; 24.5 dB; 3 V; 37 percent; InGaP-GaAs; InGaP/GaAs HBT MMIC power amplifier; W-CDMA; active bias circuit; adjacent channel power ratio; chip area; hybrid phase shift keying; linear power gain; lineariser; mobile communication terminal; output power; phase distortion; power-added efficiency; shunt capacitor; signal loss; signal modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20011046
