• DocumentCode
    1555028
  • Title

    Adverse effect of Ge+ implantation for fabrication of SiGe PMOS

  • Author

    Straube, U.N. ; Waite, A.M. ; Evans, A.G.R. ; Nejim, A. ; Hemment, P.L.F.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    37
  • Issue
    25
  • fYear
    2001
  • fDate
    12/6/2001 12:00:00 AM
  • Firstpage
    1549
  • Lastpage
    1550
  • Abstract
    SiGe heterostructure MOSFETs have the potential for improved channel mobility over Si-only devices. It is shown that fabrication by implantation leads to inferior devices in contrast to previously reported work. A simultaneous decrease of the drain current and increase of the interface state density has been observed
  • Keywords
    Ge-Si alloys; MOSFET; carrier mobility; interface states; ion implantation; semiconductor materials; Ge+ implantation; PMOS; SiGe; SiGe-Si; channel mobility; drain current; heterostructure MOSFETs; interface state density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20011039
  • Filename
    972207
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1555028