Title :
Adverse effect of Ge+ implantation for fabrication of SiGe PMOS
Author :
Straube, U.N. ; Waite, A.M. ; Evans, A.G.R. ; Nejim, A. ; Hemment, P.L.F.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fDate :
12/6/2001 12:00:00 AM
Abstract :
SiGe heterostructure MOSFETs have the potential for improved channel mobility over Si-only devices. It is shown that fabrication by implantation leads to inferior devices in contrast to previously reported work. A simultaneous decrease of the drain current and increase of the interface state density has been observed
Keywords :
Ge-Si alloys; MOSFET; carrier mobility; interface states; ion implantation; semiconductor materials; Ge+ implantation; PMOS; SiGe; SiGe-Si; channel mobility; drain current; heterostructure MOSFETs; interface state density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20011039
