DocumentCode
1555032
Title
Effect of deep traps on sheet charge in AlGaN/GaN high electron mobility transistors
Author
Klein, P.B. ; Binari, S.C. ; Ikossi, K. ; Wickenden, A.E. ; Koleske, D.D. ; Henry, R.L.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
37
Issue
25
fYear
2001
fDate
12/6/2001 12:00:00 AM
Firstpage
1550
Lastpage
1551
Abstract
The same traps that produce current collapse in AlGaN/GaN high electron mobility transistors are also shown to limit the sheet charge that is attainable in these devices by the trapping of channel carriers at equilibrium (no applied bias). In the present case, this reduction in sheet charge was found comparable to that induced by current collapse
Keywords
III-V semiconductors; aluminium compounds; deep levels; electric charge; electron traps; gallium compounds; high electron mobility transistors; hot carriers; two-dimensional electron gas; wide band gap semiconductors; 2DEG; AlGaN-GaN; AlGaN/GaN HEMT; channel carriers; current collapse; deep centres; deep electron traps; high electron mobility transistors; nitride-based devices; sheet charge; two-dimensional electron gas;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/e:20011040
Filename
972208
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