Title :
GaAs monolithic microwave floating active inductor
Author :
Zhang, G.F. ; Villegas, Maria L.
Author_Institution :
Lab. de Telecommun. et Traitement du Signal ESIEE, Noisy-le-Grand, France
Abstract :
A broadband monolithic microwave floating active inductor is proposed. This floating active inductor operates at a much higher frequency range than a spiral inductor and its size is independent of the inductance value. This circuit has a high inductance value with a very low loss.
Keywords :
III-V semiconductors; MMIC; active networks; field effect integrated circuits; gallium arsenide; inductors; GaAs; broadband; floating active inductor; low loss; monolithic microwave IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911155
