Title :
Monolithic integration of an InGaAsP-InP MQW laser/waveguide using a twin-guide structure with a mode selection layer
Author :
Xu, Lie ; Gokhale, M.R. ; Studenkov, P. ; Dries, J.C. ; Chao, C.-P. ; Garbuzov, D. ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
We demonstrate a monolithically integrated 1.55-μm wavelength InGaAsP-InP multiple-quantum-well (MQW) laser with a passive Y-branch waveguide in a vertical twin-waveguide structure. To reduce the sensitivity of the device performance characteristics to laser cavity length and variations in the layer structure, we introduce an In/sub 0.53/Ga/sub 0.47/As absorption, or "loss" layer. This layer eliminates the propagation of the even mode, while having minimal effect on the odd mode. The threshold current densities and differential efficiencies of the devices are unaffected by the loss layer. A record high coupling efficiency of 45% from the laser to the external passive waveguide is obtained.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser modes; optical couplers; quantum well lasers; waveguide lasers; 1.55 mum; 45 percent; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.53/Ga/sub 0.47/As absorption layer; InGaAsP-InP; InGaAsP-InP MQW laser/waveguide; coupling efficiency; differential efficiencies; even mode propagation elimination; loss layer; mode selection layer; monolithic integration; passive Y-branch waveguide; performance characteristics sensitivity reduction; platform technology; threshold current densities; twin-guide structure; vertical twin-waveguide structure; Fiber lasers; Laser modes; Monolithic integrated circuits; Optical coupling; Optical waveguides; Quantum well devices; Quantum well lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
