DocumentCode
1555200
Title
A broad-band millimeter-wave optical modulator using a passively modelocked semiconductor laser with phase noise compensation
Author
Park, J. ; Buckman, L.A. ; Lau, K.Y.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
9
Issue
5
fYear
1997
fDate
5/1/1997 12:00:00 AM
Firstpage
619
Lastpage
621
Abstract
A new and simple technique to produce efficient optical modulation at millimeter-wave frequencies by compensating for the phase noise of a 0.85-μm passively modelocked semiconductor laser is presented. The passively modelocked laser is intensity modulated with the electrically mixed product of its phase noise and the millimeter-wave information signal. One of the resulting sidebands to the modelocked note is identical to the millimeter-wave frequency information because of the cancellation of the phase noise of the modelocked signal. A carrier-to-noise ratio (CNR) of 87 dBc/Hz at 41.9 GHz is demonstrated and it is shown that optical modulation at subcarrier frequencies up to 100 GHz and a CNR of 120 dBc/Hz is possible.
Keywords
broadband networks; electro-optical modulation; infrared sources; laser mode locking; laser noise; laser transitions; optical fibre communication; optical transmitters; phase noise; semiconductor device noise; semiconductor lasers; 0.85 mum; 100 GHz; 41.9 GHz; broad-band millimeter-wave optical modulator; carrier-to-noise ratio; electrically mixed product; intensity modulated; millimeter-wave frequencies; millimeter-wave information signal; modelocked note; optical modulation; optical transmitters; passively modelocked semiconductor laser; phase noise; phase noise compensation; subcarrier frequencies; Frequency; Intensity modulation; Laser modes; Laser noise; Millimeter wave technology; Optical modulation; Optical noise; Phase modulation; Phase noise; Semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.588153
Filename
588153
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