DocumentCode :
1555213
Title :
Sintering of Copper Particles for Die Attach
Author :
Kähler, Julian ; Heuck, Nicolas ; Wagner, Alexander ; Stranz, Andrej ; Peiner, Erwin ; Waag, Andreas
Author_Institution :
Inst. fur Halbleitertech., Tech. Univ. Braunschweig, Braunschweig, Germany
Volume :
2
Issue :
10
fYear :
2012
Firstpage :
1587
Lastpage :
1591
Abstract :
First steps are taken toward a low-cost alternative to silver sintering as a highly reliable die attach technology for deep drilling applications and future power electronic modules. In this feasibility analysis, we evaluate sintering of copper particles for die attach. Particulate copper pastes are pretreated in H2 atmosphere (50 mbar) in order to gain oxide-free particles. Subsequently, particles are sintered at a pressure of 40 N/mm2 and a temperature of 350°C for 2 min. Porosity, Young´s modulus as well as electrical and thermal conductivities of sintered layers are analyzed. Moreover, shear tests at ambient temperature are performed for evaluating the adhesion of monometallic as well as Cu-Au bonds according to the American military standard for chip-substrate contacts (MIL-STD-883H, method 2019.8).
Keywords :
Young´s modulus; copper; electrical conductivity; microassembling; porosity; semiconductor device packaging; silver; sintering; thermal conductivity; Ag; American military standard; Cu; MIL-STD-883H method 2019.8; Young´s modulus; adhesion; ambient temperature; chip-substrate contacts; copper particles; copper pastes; deep drilling applications; die attach technology; electrical conductivities; oxide-free particles; porosity; power electronic modules; pressure 50 mbar; shear tests; silver sintering; sintered layers; temperature 350 C; thermal conductivities; time 2 min; Conductivity; Copper; Educational institutions; Microassembly; Powders; Silver; Substrates; Copper; electronics packaging; nanoparticles; semiconductor device packaging;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2012.2201940
Filename :
6236102
Link To Document :
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