Title :
The performance of double active region InGaAsP lasers
Author :
Champagne, A. ; Maciejko, Roman ; Glinski, Jan M.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada
fDate :
10/1/1991 12:00:00 AM
Abstract :
The light-current characteristic and temperature behavior of the double-carrier-confinement (DCC) InGaAsP laser are shown to be largely determined by Auger recombination. The carrier distributions in the two active regions, especially their relative fractions, play a major role in device behavior. A self-consistent, comprehensive numerical laser model is used to analyze a set of devices showing that superlinearity and possibly bistability are due to saturable absorption in the second active region and that a high characteristic temperature is usually tied with a higher threshold current density because of substantial Auger recombination rates in this type of device
Keywords :
Auger effect; III-V semiconductors; carrier mobility; gallium arsenide; gallium compounds; indium compounds; laser theory; optical bistability; optical saturable absorption; semiconductor device models; semiconductor junction lasers; Auger recombination; bistability; carrier distributions; double active region InGaAsP lasers; double-carrier-confinement; high characteristic temperature; laser model; light-current characteristic; recombination rates; saturable absorption; semiconductors; superlinearity; temperature behavior; threshold current density; Heterojunctions; Laser modes; Laser theory; Laser tuning; Optical materials; Poisson equations; Radiative recombination; Spontaneous emission; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of