Title :
Large field-induced refractive index change without red shift of absorption edge in five-step asymmetric coupled quantum wells with modified potential
Author :
Feng, H. ; Pang, J.P. ; Tada, K. ; Nakano, Y.
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
fDate :
5/1/1997 12:00:00 AM
Abstract :
A structure composed of five-step asymmetric coupled quantum wells (FACQWs) is first proposed for large field-induced refractive index change without red shift of absorption edge. A strong exciton absorption peak is caused by e1hh2 and e2hh1 transitions with a small applied electric field. The field-induced refractive index change of FACQWs is larger by one order compared to that of rectangular quantum well when the operation wavelength is apart from absorption edge.
Keywords :
electro-optical modulation; excitons; integrated optics; optical couplers; optical waveguides; red shift; refractive index; semiconductor quantum wells; symmetry; absorption edge; e1hh2 transitions; e2hh1 transitions; electro optical modulators; field-induced refractive index change; five-step asymmetric coupled quantum wells; large field-induced refractive index change; modified potential; operation wavelength; rectangular quantum well; red shift; small applied electric field; strong exciton absorption peak; ultrafast modulators; Electromagnetic wave absorption; Excitons; Gallium arsenide; Integrated optics; Optical waveguides; Phase modulation; Potential well; Refractive index; Semiconductor waveguides; Waveguide transitions;
Journal_Title :
Photonics Technology Letters, IEEE
