High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

Author

Wohlmuth, W.A. ; Fay, P. ; Vaccaro, K. ; Martin, E.A. ; Adesida, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

9

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

654

Lastpage

656

Abstract

The responsivity and the bandwidth of metal-semiconductor-metal photodetectors (MSMPD´s) with different InGaAs absorption layer thicknesses and electrode geometries were investigated. By decreasing the InGaAs thickness from 1.0 to 0.25 μm, the bandwidth was found to increase by approximately a factor of 2, while the responsivity was found to decrease by almost a factor of 3 from 0.29 to 0.10 A/W at a bias of -5 V. Devices with an electrode width and spacing of 1 μm and a 0.25-μm absorption layer displayed a bandwidth of 19.5 GHz when biased at -15 V under front-side illumination with 1.55-μm light.

Keywords

III-V semiconductors; gallium arsenide; geometry; indium compounds; light absorption; metal-semiconductor-metal structures; photodetectors; /spl mu/m absorption layer; 1 to 0.25 mum; 1.55 mum; 15 V; 5 V; InGaAs; InGaAs absorption layer thicknesses; InGaAs metal-semiconductor-metal photodetectors; InGaAs thickness; MSM high speed photodetectors; bandwidth; electrode geometries; electrode width; front-side illumination; responsivity; thin absorption layers; Absorption; Bandwidth; Dark current; Degradation; Electrodes; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Schottky barriers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.588184

Filename

588184