Title :
High-performance MSM photodetectors using Cu Schottky contacts
Author :
Davidson, A.C. ; Wise, F.W. ; Compton, R.C. ; Emerson, D.T. ; Shealy, J.R. ; Currie, M. ; Wang, C.-C.
Author_Institution :
Dept. of Appl. Phys., Cornell Univ., Ithaca, NY, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
GaInAs metal-semiconductor-metal photodetectors fabricated with Cu Schottky contacts on an AlInAs barrier-enhancement layer are described. The Cu electrodes were found to decrease by a factor of two the dark current of large area pads compared to pads formed with Ti, illustrating the potential for improving Schottky barriers by proper choice of metal type. The dark current density at 10 V is 3.8 pA/μm2 and the response time is 17 ps.
Keywords :
III-V semiconductors; Schottky barriers; current density; dark conductivity; electrodes; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical fabrication; photodetectors; semiconductor technology; 10 V; 17 ps; AlInAs; AlInAs barrier-enhancement layer; Cu; Cu Schottky contacts; Cu electrodes; GaInAs metal-semiconductor-metal photodetectors; Schottky barriers; Ti; dark current; dark current density; high-performance MSM photodetectors; metal type; response time; Dark current; Delay; Electrodes; Gallium arsenide; Gallium compounds; Gold; Indium; Inorganic materials; Photodetectors; Schottky barriers;
Journal_Title :
Photonics Technology Letters, IEEE
