High-performance MSM photodetectors using Cu Schottky contacts

Author

Davidson, A.C. ; Wise, F.W. ; Compton, R.C. ; Emerson, D.T. ; Shealy, J.R. ; Currie, M. ; Wang, C.-C.

Author_Institution

Dept. of Appl. Phys., Cornell Univ., Ithaca, NY, USA

Volume

9

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

657

Lastpage

659

Abstract

GaInAs metal-semiconductor-metal photodetectors fabricated with Cu Schottky contacts on an AlInAs barrier-enhancement layer are described. The Cu electrodes were found to decrease by a factor of two the dark current of large area pads compared to pads formed with Ti, illustrating the potential for improving Schottky barriers by proper choice of metal type. The dark current density at 10 V is 3.8 pA/μm² and the response time is 17 ps.

Keywords

III-V semiconductors; Schottky barriers; current density; dark conductivity; electrodes; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical fabrication; photodetectors; semiconductor technology; 10 V; 17 ps; AlInAs; AlInAs barrier-enhancement layer; Cu; Cu Schottky contacts; Cu electrodes; GaInAs metal-semiconductor-metal photodetectors; Schottky barriers; Ti; dark current; dark current density; high-performance MSM photodetectors; metal type; response time; Dark current; Delay; Electrodes; Gallium arsenide; Gallium compounds; Gold; Indium; Inorganic materials; Photodetectors; Schottky barriers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.588185

Filename

588185