A silicon NMOS monolithically integrated optical receiver

Author

Qi, J. ; Schow, C.L. ; Garrett, L.D. ; Campbell, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

9

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

663

Lastpage

665

Abstract

We report a silicon p-i-n/NMOS monolithically integrated optical receiver. The p-i-n photodiode is a planar interdigitated structure that has exhibited a dark current of 1.3 pA at 5 V and quantum efficiencies of 84 and 74% at 800 and 870 nm, respectively. Both depletion- and enhancement-mode MOSFET´s are used in the preamplifier; the effective channel length of the MOSFET´s is 0.6 μm. A transimpedance of 6.5 k/spl Omega/ and a bandwidth of 130 MHz has been obtained from the preamplifier circuit. The sensitivities for a bit error rate of 10/sup -9/ were -33 and -25.5 dBm at bit rates of 155 and 300 Mb/s, respectively.

Keywords

MOSFET circuits; dark conductivity; elemental semiconductors; frequency response; integrated optoelectronics; optical receivers; p-i-n photodiodes; preamplifiers; sensitivity; silicon; 1.3 pA; 155 Mbit/s; 300 Mbit/s; 5 V; 74 percent; 800 nm; 84 percent; 870 nm; Si; Si NMOS monolithically integrated optical receiver; bit error rate; dark current; effective channel length; enhancement-mode MOSFET´s; p-i-n photodiode; p-i-n/NMOS monolithically integrated optical receiver; planar interdigitated structure; preamplifier; preamplifier circuit; quantum efficiencies; sensitivities; transimpedance; Bandwidth; Bit error rate; Bit rate; Circuits; Dark current; MOS devices; Optical receivers; PIN photodiodes; Preamplifiers; Silicon;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.588191

Filename

588191