Title :
A silicon NMOS monolithically integrated optical receiver
Author :
Qi, J. ; Schow, C.L. ; Garrett, L.D. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
We report a silicon p-i-n/NMOS monolithically integrated optical receiver. The p-i-n photodiode is a planar interdigitated structure that has exhibited a dark current of 1.3 pA at 5 V and quantum efficiencies of 84 and 74% at 800 and 870 nm, respectively. Both depletion- and enhancement-mode MOSFET´s are used in the preamplifier; the effective channel length of the MOSFET´s is 0.6 μm. A transimpedance of 6.5 k/spl Omega/ and a bandwidth of 130 MHz has been obtained from the preamplifier circuit. The sensitivities for a bit error rate of 10/sup -9/ were -33 and -25.5 dBm at bit rates of 155 and 300 Mb/s, respectively.
Keywords :
MOSFET circuits; dark conductivity; elemental semiconductors; frequency response; integrated optoelectronics; optical receivers; p-i-n photodiodes; preamplifiers; sensitivity; silicon; 1.3 pA; 155 Mbit/s; 300 Mbit/s; 5 V; 74 percent; 800 nm; 84 percent; 870 nm; Si; Si NMOS monolithically integrated optical receiver; bit error rate; dark current; effective channel length; enhancement-mode MOSFET´s; p-i-n photodiode; p-i-n/NMOS monolithically integrated optical receiver; planar interdigitated structure; preamplifier; preamplifier circuit; quantum efficiencies; sensitivities; transimpedance; Bandwidth; Bit error rate; Bit rate; Circuits; Dark current; MOS devices; Optical receivers; PIN photodiodes; Preamplifiers; Silicon;
Journal_Title :
Photonics Technology Letters, IEEE
